Pre-growth treatment of 4H-SiC substrates by hydrogen etching at low pressure

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Masahara, K ^a   Ishida, Y ^a,b   Okumura, H ^a,b   Takahashi, T ^a,b   Kushibe, M ^a   Ohno, T ^a   Suzuki, T ^a   Tanaka, T ^b   Yoshida, S ^a,b   Arai, K ^a,b  

^a Ultra Low Loss Pwr Device TRB   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; ETCHING; HYDROGEN; MORPHOLOGY; PRESSURE EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; SURFACE STRUCTURE;

ETCH RATE;

SILICON CARBIDE;

EID: 0033717445     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)

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4. J. A. Powell et al., Mater. Sci. Forum 264-268 (1998), p. 421.
5. R. N. Ghoshtagore, Solid-State Electronics Pergamon Press Vol.9 (1966), p. 178
6. R. L. Bartdorf and F. M. Smits, J. Appl. Phys. 30 (1959), p. 259