Homoepitaxial growth of 4H-SiC using a chlorosilane silicon precursor

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 175-178

  MacMillan, M F ^a   Loboda, M J ^a   Chung, G ^a   Carlson, E ^a   Wan, J ^a  

^a DOW CORNING CORPORATION   (United States)

Author keywords

Chlorosilane; Hot wall CVD; SiC epitaxy

Indexed keywords

FLOW RATE; GROWTH RATE; PROPANE; SILICON CARBIDE; SILICON WAFERS; THIN FILMS;

CHLOROSILANE; HOMOEPITAXIAL GROWTH; HOT WALL CVD; SIC EPITAXY;

EPITAXIAL GROWTH;

EID: 34547677462     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.175     Document Type: Conference Paper

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