Epitaxial growth of 4H-SiC at low temperatures using CH3Cl carbon gas precursor: Growth rate, surface morphology, and influence of gas phase nucleation

Journal of Crystal Growth

Volumn 294, Issue 2, 2006, Pages 260-267

  Koshka, Yaroslav ^a   Lin, Huang De ^a   Melnychuk, Galyna ^a   Wood, Colin ^b  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

^b OFFICE OF NAVAL RESEARCH   (United States)

Author keywords

A1. Crystal morphology; A1. Growth models; A3. Chemical vapor deposition; A3. Chloride vapor phase epitaxy; A3. Hot wall epitaxy; B2. Semiconducting silicon carbide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; CONDENSATION; GROWTH RATE; LOW TEMPERATURE OPERATIONS; NUCLEATION; SEMICONDUCTING SILICON COMPOUNDS; SURFACE MORPHOLOGY; VAPOR PHASE EPITAXY;

CARBON GAS PRECURSORS; CHLOROMETHANES; GROWTH MODELS; HOT WALL EPITAXY;

SILICON CARBIDE;

EID: 33846108552     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.06.024     Document Type: Article

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