Modeling of gas phase nucleation during silicon carbide chemical vapor deposition

Diamond and Related Materials

Volumn 9, Issue 3, 2000, Pages 472-475

  Vorob'ev, A N ^a   Karpov, S Yu ^b   Bord, O V ^c   Zhmakin, A I ^c   Lovtsus, A A ^d   Makarov, Yu N ^e  

^a ITMO UNIVERSITY   (Russian Federation)

^b SOFT IMPACT LTD   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

^d PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^e UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; CRYSTAL GROWTH; GRAPHITE; GRAPHITIZATION; MATHEMATICAL MODELS; NUCLEATION; SILANES; SILICON;

GAS PHASE NUCLEATION;

SILICON CARBIDE;

EID: 0033737970     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(99)00283-6     Document Type: Article

References (7)

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