Improvements of NBTI reliability in SiGe p-FETs

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 1082-1085

  Franco, J ^a,b   Kaczer, B ^a   Cho, M ^a   Eneman, G ^a,c   Groeseneken, G ^a,b   Grasser, T ^d  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c RESEARCH FOUNDATION FLANDERS FWO   (Belgium)

^d INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

Ge; High mobility substrates; NBTI; PFETs; Reliability; SiGe; Thin EOT

Indexed keywords

GE; HIGH MOBILITY; NBTI; PFETS; SIGE; THIN EOT;

GERMANIUM; MESFET DEVICES; SILICON ALLOYS;

RELIABILITY;

EID: 77957905534     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488668     Document Type: Conference Paper

References (16)

1. V. Huard, M. Denais, C. Parthasarathy, "NBTI degradation: From physical mechanism to modeling", in Microelectronics Reliability, vol. 46, no. 1, Jan. 2006, pp. 1-23
2. N. Collaert, P. Verheyen, K. De Meyer, R. Loo and M. Caymax, "High-Performance Strained Si/SiGe pMOS Devices With Multiple Quantum Wells", IEEE Transactions on nanotechnology, vol. 1, no. 4, Dec. 2002, pp. 190-194
3. N. Collaert, P. Verheyen, K. De Meyer, R. Loo and M. Caymax, "Influence of the Ge-concentration and RTA on the device performance ofstrained Si/SiGe pMOS devices", in Proc. ESSDERC 2002, pp. 263-266
4. 1-x-Si Quantum Wells With High-κ/Metal-Gate Stacks", IEEE Electron Device Letters, vol. 29, no. 9, Sept. 2008, pp. 99-101
5. 4), and Controlled Short Channel Effects (SCEs)", IEEE Electron Device Letters, vol. 29, no. 9, Sept. 2008, pp. 1017-1020
6. N. Tamura, Y. Shimamune and H. Maekawa, "Embedded Silicon Germanium (eSiGe) technologies for 45nm nodes and beyond", in Proc. IEEE IWJT 2008, pp. 73-77
7. A. Hikavyy, R. Loo, L. Witters S. Takeoka, J. Geypen, B. Brijs, C. Merckling, M. Caymax and J. Dekoster, "SiGe SEG Growth For Buried Channel p-MOS Devices", ECS Transactions, vol. 25, No. 7, 2009, pp. 201-210
8. R. Loo, C. Walczyk, P. Verheyen, R. Rooyackers, F.E. Leys, G. Eneman, D. Shamiryan, P.P. Absil, T. Delande, A. Moussa, H. Bender, C. Drijbooms, L. Geenen, M. Caymax, J.W. Weijtmans, R. Wise, V. Machkaoutsan, P. Tomasini, C. Arena, J. McCormack, S. Passefort, H. Sorada, A. Inoue, B.C. Lee, S. Hyun, S. Jakschik, S. Godny, "Selective Epitaxy of Si/SiGe to Improve pMOS Devices by Recessed Source/Drain and/or Buried SiGe Channels", ECS Transactions, Vol. 3, No. 7, 2006, pp. 453-465
9. B. Kaczer, T. Grasser, Ph. J. Roussel, J. Martin-Martinez, R. O'Connor, B.J. O'Sullivan, G. Groeseneken, "Ubiquitous Relaxation in BTI Stressing-New Evaluation and Insights", in Proc. IEEE IRPS 2008, pp. 20-27
10. DDegradation in Strained/Unstrained PMOS Transistors Under NBTI Stress", in Proc. IEEE IEDM 2008, pp. 107-110
11. S.S. Iyer, G.L. Patton, J.M.C. Stork, B.S. Meyerson, D.L. Harame, "Heterojunction bipolar transistors using Si-Ge alloys", IEEE Transactions on Electron Devices, Vol.36, No. 10, Oct. 1989, pp. 2043-2064
12. M.V. Fischetti and S.E. Laux, "Band Structure, Deformation Potentials, and Carrier Mobility in Strained Si, Ge, and SiGe Alloys", in Journal of Applied Physics, vol. 80, no. 4, Aug. 1996, pp. 2234-2252
13. B. Kaczer, J. Franco, J. Mitard, Ph.J. Roussel, A. Veloso, and G. Groeseneken, "Improvement in NBTI Reliability of Si-passivated Ge/highk/metal gate pFETs", in Microelectronics Engineering, Vol. 86, No. 7-9, Jul.-Sep. 2009, pp. 1582-1584
14. J. Mitard, K. Martens, B. De Jaeger, J. Franco, C. Shea, C. Plourde, F.E. Leys, R. Loo, G. Hellings, G. Eneman, W.E. Wang, J.C. Lin, B. Kaczer, K. De Meyer, T. Hoffman, S. De Gendt, M. Caymax, M. Meuris, and M.M. Heyns, "Impact of Epi-Si Growth Temperature on GepFET Performance", in Proc. ESSDERC 2009, pp. 411-414
15. J. Franco, B. Kaczer, A. Stesmans, V.V. Afanas'ev, K. Martens, M. Aoulaiche, T. Grasser, J. Mitard, G. Groeseneken, "Impact of Si-Passivation Thickness and Processing on NBTI Reliability of Ge and SiGe pMOSFETs", as discussed at IEEE SISC 2009, Washington, DC
16. T. Grasser, B. Kaczer, W. Goes, Th. Aichinger, Ph. Hehenberger, and M. Nelhiebel, "A Two-Stage Model for Negative Bias Temperature Instability", in Proc. IEEE IRPS 2009, pp. 33-44