AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes

Microelectronics Reliability

Volumn 51, Issue 2, 2011, Pages 195-200

  Kuball, Martin ^a   Ťapajna, Milan ^a   Simms, Richard J T ^a   Faqir, Mustapha ^a   Mishra, Umesh K ^b  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN HEMTS; BACKPLATE; BULK DIFFUSIONS; DEGRADATION MECHANISM; DEVICE DEGRADATION; DEVICE LAYERS; DEVICE RELIABILITY; DEVICE STRUCTURES; DIFFUSION CONSTANT; DIFFUSION PROCESS; ELECTRONIC TRAPS; GATE EDGE; OFF-STATE STRESS; THERMAL ACTIVATION ENERGIES; TRAP GENERATION; TRAP STATE;

DEGRADATION; DIFFUSION; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; LEAKAGE CURRENTS;

ACTIVATION ENERGY;

EID: 79551478507     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.08.014     Document Type: Conference Paper

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