The DARPA wide band gap semiconductors for RF applications (WBGS-RF) program: Phase II results

2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009

Volumn , Issue , 2009, Pages

  Rosker, Mark ^a   Bozada, Christopher ^b   Dietrich, Harry ^c   Hung, Alfred ^d   Via, Dave ^b   Binari, Steve ^c   Vivierios, Ed ^d   Cohen, Eliot ^e   Hodiak, Justin ^f  

^a DEFENSE ADVANCED RESEARCH PROJECTS AGENCY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

^d U S ARMY RESEARCH LABORATORY   (United States)

^e EBCO Technology Advising Inc   (United States)

^f BOOZ ALLEN HAMILTON   (United States)

Author keywords

GaN; HEMT; Power amplifier; Reliability

Indexed keywords

DEFENSE ADVANCED RESEARCH PROJECTS AGENCIES; DURING PHASE; GAN; PHASE II; RF APPLICATIONS; WIDE-BAND-GAP SEMICONDUCTOR;

ENERGY GAP; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; POWER AMPLIFIERS; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE;

APPLICATION PROGRAMS;

EID: 84887451703     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. K. S. Boutrous, and B. Brar, "A study of output power stability of GaN HEMTs on SiC substrates," Reliability Physics Symposium Proceedings, pp. 577-578, April 2004
2. A. Koudymov, M. Shur, G. Simi, K. Chu, P. C. Chao, C. Lee, J. Jimenez, and T Balistreri, "Analytical HFET I-V Model in Presence of Current Collapse," Transactions on Electron Devices, Vol. 55, no. 3, pp. 712-720, March 2008.
3. U. Chowdhury, J. L. Jimenez, C. Lee, E. Beam, P. Saunier, T. Balistreri, S. Y. Park, T. Lee, J. Wang, M. J. Kim, J. Joh, and J. A. del Alamo, "TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs," Electron Device Letters, Vol. 29, no. 10, pp. 1098-1101, October 2008.