Insights into electroluminescent emission from AlGaN/GaN field effect transistors using micro-Raman thermal analysis

Applied Physics Letters

Volumn 88, Issue 2, 2006, Pages 1-3

  Pomeroy, J W ^a   Kuball, M ^a   Uren, M J ^b   Hilton, K P ^b   Balmer, R S ^b   Martin, T ^b  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b QINETIQ   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ELECTRIC CURRENTS; ELECTROLUMINESCENCE; ENERGY DISSIPATION; GALLIUM NITRIDE; HEATING; IRRADIATION; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMOANALYSIS;

ELECTROLUMINESCENT EMISSION; JOULE SELF-HEATING; MICRO-RAMAN THERMAL ANALYSIS; NONRADIATIVE ENERGY DISSIPATION;

FIELD EFFECT TRANSISTORS;

EID: 30744447217     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2163076     Document Type: Article

References (8)

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