Impact of electrical degradation on trapping characteristics of GaN high electron mobility Transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Joh, Jungwoo ^a   Del Alamo, Jesus A ^a  

^a USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; BARRIER LAYERS; BEFORE AND AFTER; CARRIER TRAPPING; CRITICAL VOLTAGES; CURRENT COLLAPSE; DE-TRAPPING; DELETERIOUS EFFECTS; DEVICE DEGRADATIONS; ELECTRICAL DEGRADATIONS; ELECTRICAL STRESS; GAN HEMTS; GAN HIGH ELECTRON MOBILITY TRANSISTORS; TRAPPING CHARACTERISTICS;

DEGRADATION; ELECTRIC CURRENT MEASUREMENT; ELECTRON DEVICES; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM; TRANSIENT ANALYSIS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 64549161461     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796725     Document Type: Conference Paper

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