Impact of electrical degradation on trapping characteristics of GaN high electron mobility Transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Joh, Jungwoo ^a   Del Alamo, Jesus A ^a  

^a Massachusetts Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; BARRIER LAYERS; BEFORE AND AFTER; CARRIER TRAPPING; CRITICAL VOLTAGES; CURRENT COLLAPSE; DE-TRAPPING; DELETERIOUS EFFECTS; DEVICE DEGRADATIONS; ELECTRICAL DEGRADATIONS; ELECTRICAL STRESS; GAN HEMTS; GAN HIGH ELECTRON MOBILITY TRANSISTORS; TRAPPING CHARACTERISTICS;

DEGRADATION; ELECTRIC CURRENT MEASUREMENT; ELECTRON DEVICES; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM; TRANSIENT ANALYSIS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 64549161461     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796725     Document Type: Conference Paper

References (12)

1. Y. Uemoto, et al, IEEE IEDM Tech, Digest, pp. 861-864, 2007.
2. Y. F. Wu, et al, IEEE IEDM Tech, Digest, pp. 405-407, 2007.
3. J. L. Jimenez, et al., IEEE Int. Rel. Phys. Symp. PCHNeedings, 2008.
4. J. Joh, et al., IEEE IEDM Tech. Digest, pp. 415-418, 2006.
5. J. Joh, et al, IEEE Electron Dev. Lett, vol. 29, pp. 287-289, 2008.
6. E. Zanoni, et al., IEEE IEDM Tech, Digest, pp. 381-384, 2007.
7. J. A. Mittereder, et al., Appl. Phys. Lett., vol. 83, pp. 1650-1652, 2003.
8. A. Sozza, et al, IEEE IEDM Tech. Digest, pp. 590-593, 2005.
9. T. Mizutani, et al., phys. stat. sol.(a), vol. 200, pp. 195-198, 2003.
10. E. Kohn, et al., IEEE Trans. MTTs, vol. 51, pp. 634-642, 2003.
11. S. C. Binari, et al, PROC. IEEE, vol. 90, pp. 1048-1058, 2002.
12. J. Joh, et al., IEEE IEDM Tech, Digest, pp. 385-388, 2007.