Magnesium diffusion at dislocation in wurtzite-type GaN crystal

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 9 A, 2005, Pages 6495-6504

  Harafuji, Kenji ^a   Kawamura, Katsuyuki ^b  

^a PANASONIC CORPORATION   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Diffusion; Dislocation; GaN; Mg dopant; Molecular dynamics; Simulation; Two body interatomic potential

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; DISLOCATIONS (CRYSTALS); MAGNESIUM PRINTING PLATES; MOLECULAR DYNAMICS;

HARTREE-FOCK AB INITIA METHOD; MG DOPANT; TWO-BODY INTERATOMIC POTENTIAL;

GALLIUM NITRIDE;

EID: 31544470618     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.6495     Document Type: Article

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