Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT's

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 689-692

  Verzellesi, G ^a   Pierobon, R ^b   Rampazzo, F ^b   Meneghesso, G ^b   Chini, A ^c   Mishra, U K ^c   Canali, C ^a   Zanoni, E ^b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRAPS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS;

CURRENT COLLAPSE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036927522     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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7. DESSIS 6.0 Reference Manual, ISE AG, Zurich (Switzerland), 1999.