Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis

Applied Surface Science

Volumn 257, Issue 7, 2011, Pages 2700-2706

  Qiu, Rongfu ^a   Lu, Hai ^a,b   Chen, Dunjun ^a   Zhang, Rong ^a   Zheng, Youdou ^a  

^a NANJING UNIVERSITY   (China)

^b NANJING ELECTRONIC DEVICES INSTITUTE   (China)

Author keywords

Defects; GaN; ICP etching

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEFECTS; ETCHING; GALLIUM NITRIDE; III-V SEMICONDUCTORS; PHOTOLUMINESCENCE SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SURFACE DEFECTS;

CHAMBER PRESSURE; ETCHING CONDITION; ETCHING DAMAGES; ICP ETCHING; NON-RADIATIVE RECOMBINATIONS; STRUCTURAL DEFECT; SURFACE DAMAGES; SURFACE FEATURE;

INDUCTIVELY COUPLED PLASMA;

EID: 79251593378     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.10.048     Document Type: Article

References (24)

1. Y.F. Wu, D. Kapolnek, J.P. Ibbetson, P. Parikh, B.P. Keller, and U.K. Mishra IEEE Trans. Electron Devices 48 2001 586 590
2. M.A. Khan, Q. Chen, J.W. Yang, M.S. Shur, B.T. Dermott, and J.A. Higgins IEEE Electron Device Lett. 17 1996 325 327
3. M.A. Khan, J.N. Kuznia, D.T. Olson, W.J. Schaff, J.W. Burm, and M.S. Shur Appl. Phys. Lett. 65 1994 1121 1123
4. F.A. Ponce, and D.P. Bour Nature 386 1997 351 359
5. M. Razeghi, and A. Rogalski J. Appl. Phys. 79 1996 7433 7473
6. T. Nishida, H. Saito, and N. Kobayashi Appl. Phys. Lett. 79 2001 711 712
7. R.J. Shul, G.B. McClellan, S.A. Casalnuovo, D.J. Rieger, S.J. Pearton, C. Constantine, and R.F. Karlicek Appl. Phys. Lett. 69 1996 1119 1121
8. X.A. Cao, A.P. Zhang, G.T. Dang, F. Ren, S.J. Pearton, R.J. Shul, and L. Zhang J. Vac. Sci. Technol. A 18 2000 1144 1148
9. X.A. Cao, H. Cho, S.J. Pearton, G.T. Dang, A.P. Zhang, F. Ren, R.J. Shul, L. Zhang, R. Hickman, and J.M. Van Hove Appl. Phys. Lett. 75 1999 232 234
10. R.J. Shul, L. Zhang, A.G. Baca, C.G. Willison, J. Han, S.J. Pearton, and F. Ren J. Vac. Sci. Technol. A 18 2000 1139 1143
11. K. Remashan, S.J. Chua, A. Ramam, S. Prakash, and W. Liu Semicond. Sci. Technol. 15 2000 386 389
12. H.S. Kim, G.Y. Yeom, J.W. Lee, and T.I. Kim J. Vac. Sci. Technol. A 17 1999 2214 2219
13. L.G. Deng Dry etching of InP based materials using a high density ICP plasma system Oxford Instruments Plasma Technology 2010
14. 2 -based inductively coupled plasma etching of photonic crystals. InP Proceedings, Symposium IEEE/LEOS Benelux Chapter, 2004, Ghent 2004
15. M.J. Cooke, and G. Hassall Plasma Sources Sci. Technol. 11 2002 A74 A79
16. Z. Evgeny, S. Sergei, G. Alan, W.N. Wang, Y.G. Shreter, D.V. Tarkhin, and N.I. Bochkareva J. Vac. Sci. Technol. A 23 2005 687 692
17. E. Manabu, and C.B. Eric J. Vac. Sci. Technol. A 21 2003 470 475
18. P. Kempkes, S.V. Singh, C. Pargmann, and H. Soltwisch Plasma Sources Sci. Technol. 15 2006 378 383
19. U. Kortshagen, N.D. Gibson, and J.E. Lawler J. Phys. D: Appl. Phys. 29 1996 1224 1235
20. L. Lu, Z.Y. Gao, B. Shen, F.J. Xu, S. Huang, Z.L. Miao, Y. Hao, Z.J. Yang, G.Y. Zhang, X.P. Zhang, J. Xu, and D.P. Yu J. Appl. Phys. 104 2008 123525
21. T. Hino, S. Tomiya, T. Miyajima, K. Yanashima, S. Hashimoto, and M. Ikeda Appl. Phys. Lett. 76 2000 3421 3423
22. H. Lu, X.A. Cao, S.F. LeBoeuf, H.C. Hong, E.B. Kaminsky, and S.D. Arthur J. Cryst. Growth 291 2006 82 85
23. J. Chen, J.F. Wang, H. Wang, J.J. Zhu, S.M. Zhang, D.G. Zhao, D.S. Jiang, H. Yang, U. Jahn, and K.H. Ploog Semicond. Sci. Technol. 21 2006 1229 1235
24. H.K. Cho, F.A. Khan, I. Adesida, Z.Q. Fang, and D.C. Look J. Phys. D: Appl. Phys. 41 2008 155314