Microstructure and origin of dislocation etch pits in GaN epilayers grown by metal organic chemical vapor deposition

Journal of Applied Physics

Volumn 104, Issue 12, 2008, Pages

  Lu, L ^a   Gao, Z Y ^b   Shen, B ^a   Xu, F J ^a   Huang, S ^a   Miao, Z L ^a   Hao, Y ^b   Yang, Z J ^a   Zhang, G Y ^a   Zhang, X P ^a   Xu, J ^a   Yu, D P ^a  

^a PEKING UNIVERSITY   (China)

^b XIDIAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EPILAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; MICROSTRUCTURE; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC FORCES; CHEMICAL STABILIZATIONS; DISLOCATION LINES; EDGE COMPONENTS; ETCH PITS; GAN EPILAYERS; METAL ORGANIC; POLAR SURFACES; TEM OBSERVATIONS; THREADING DISLOCATIONS; TRAPEZOIDAL SHAPES; TRIANGULAR SHAPES; VERTICAL ETCHINGS;

VAPOR DEPOSITION;

EID: 58149233814     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3042230     Document Type: Article

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