ICP etching of III-nitride based laser structure with Cl2-Ar plasma assisted by Si coverplate material

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 23, Issue 4, 2005, Pages 687-692

  Zhirnov, Evgeny ^a   Stepanov, Sergei ^a   Gott, Alan ^a   Wang, Wang Nang ^a   Shreter, Y G ^b   Tarkhin, D V ^b   Bochkareva, N I ^b  

^a University of Bath   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ETCHING; INDUCTIVELY COUPLED PLASMA; LASERS; MORPHOLOGY; SILICON;

LASER STRUCTURE; REACTIVE RADICALS; SHEATH ION DENSITY;

NITRIDES;

EID: 31044446600     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1914812     Document Type: Article

References (20)

1. T. Wu, Z. Hao, G. Tang, and Y. Luo, Jpn. J. Appl. Phys., Part 2 42, L257 (2003).
2. K. Zhu, V. Kuryatkov, B. Borisov, G. Kipshidze, S. A. Nikishin, H. Temkin, and M. Holtz, Appl. Phys. Lett. 81, 4688 (2002).
3. D. Buttari, A. Chini, G. Meneghesso, E. Zanoni, B. Moran, S. Heikman, N. Q. Zhang, L. Shen, R. Coffie, S. P. Denbaars, and U. K. Mishra, IEEE Electron Device Lett. 23, 76 (2002).
4. D. Basak, K. Yamashita, T. Sugahara, D. Nakagawa, Q. Fareed, K. Nishino, and S. Sakai, Jpn. J. Appl. Phys., Part 1 38, 42 (1999).
5. D. Basak, K. Yamashita, T. Sugahara, D. Nakagawa, Q. Fareed, K. Nishino, and S. Sakai, Jpn. J. Appl. Phys., Part 1 38, 2646 (1999).
6. Evgeny Zhirnov, Sergei Stepanov, Wang Nang Wang, Y. G. Shreter, D. V. Takhin, and N. I. Bochkareva, J. Vac. Sci. Technol. A 22, 2336 (2004).
7. S. King, J. Barnak, M. Bremser, K. Tracy, C. Ronning, R. Davis, and R. Nemanich, J. Appl. Phys. 84, 5248 (1998).
8. J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. C. Liu, C. M. Chang, and W. C. Hung, J. Appl. Phys. 85, 1970 (1999).
9. R. J. Shul, G. B. McClellan, S. A. Casalnuova, D. J. Rieger, S. J. Pearton, C. Constantine, C. Barrat, R. F. Karlicek, C. Tran, and M. Schurman, Appl. Phys. Lett. 69, 1119 (1996).
10. M. J. Cooke and G. Hassall, Plasma Sources Sci. Technol. 11, 1 (2002).
11. M. E. Lin, Z. F. Fan, Z. Ma, L. H. Allen, and H. Morkoc, Appl. Phys. Lett. 64, 887 (1994).
12. F. A. Khan, L. Zhou, A. T. Ping, and I. Adesida, J. Vac. Sci. Technol. B 17, 2750 (1999).
13. J. W. Lee, J. Hong, and S. J. Pearton, Appl. Phys. Lett. 68, 847 (1996).
14. H. Cho, Y. B. Hahn, D. C. Hays, K. B. Jung, S. M. Donovan, C. R. Abernathy, S. J. Pearton, and R. J. Shul, MRS Internet J. Nitride Semicond. Res. 4S1, G6.56 (1999).
15. B. C. Cho, Y. H. Im, Y. B. Hahn, K. S. Nahm, Y. S. Lee, and S. J. Pearton, J. Electrochem. Soc. 147, 3914 (2000).
16. J. Lee, S. Kim, and S. Park, J. Electrochem. Soc. 148, G254 (2001).
17. R. J. Shul, L. Zhang, C. G. Willison, J. Han, S. J. Pearton, J. Hong, C. R. Abernathy, and L. F. Lester, MRS Internet J. Nitride Semicond. Res. 4S1, G8. 1 (1999).
18. D. J. Thomas, P. Southworth, M. C. Flowers, and R. Greef, J. Vac. Sci. Technol. B 7, 1325 (1989).
19. D. J. Thomas, P. Southworth, M. C. Flowers, and R. Greef, J. Vac. Sci. Technol. B 8, 516 (1990).
20. D. J. Thomas, P. Southworth, M. C. Flowers, and R. Greef, J. Vac. Sci. Technol. B 8, 1044 (1990).