Schottky diode measurements of dry etch damage in n- and p-type GaN

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 I, 2000, Pages 1144-1148

  Cao, X A ^a   Zhang, A P ^a   Dang, G T ^a   Ren, F ^a   Pearton, S J ^a   Shul, R J ^b   Zhang, L ^b  

^a University of Florida   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; DRY ETCHING; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC DISCHARGES; HYDROGEN; NITRIDES; NITROGEN; PLASMA SOURCES; POINT DEFECTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM NITRIDE;

PLASMA DIODES;

EID: 0000342842     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582314     Document Type: Article

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