Cathodoluminescence mapping and selective etching of defects in bulk GaN

Journal of Crystal Growth

Volumn 291, Issue 1, 2006, Pages 82-85

  Lu, Hai ^a   Cao, X A ^a   LeBoeuf, S F ^a   Hong, H C ^a   Kaminsky, E B ^a   Arthur, S D ^a  

^a GE GLOBAL RESEARCH   (United States)

Author keywords

A1. Cathodoluminescence; A1. Dislocation; A1. Selective etching; B1. Gallium nitride

Indexed keywords

CRYSTAL DEFECTS; ETCHING; GALLIUM NITRIDE; SODIUM COMPOUNDS; VAPOR PHASE EPITAXY;

CATHODOLUMINESCENCE MAPPING; INTERNAL DEFECTS; SELECTIVE ETCHING;

CATHODOLUMINESCENCE;

EID: 33749367859     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.02.026     Document Type: Article

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