Measurement of threading dislocation densities in GaN by wet chemical etching

Semiconductor Science and Technology

Volumn 21, Issue 9, 2006, Pages 1229-1235

  Chen, J ^a   Wang, J F ^a   Wang, H ^a   Zhu, J J ^a   Zhang, S M ^a   Zhao, D G ^a   Jiang, D S ^a   Yang, H ^a   Jahn, U ^b   Ploog, K H ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; GALLIUM NITRIDE; PHOSPHORIC ACID; TRANSMISSION ELECTRON MICROSCOPY; VECTORS;

BURGERS VECTORS; EPITAXIAL LATERAL OVERGROWTH; THREADING DISLOCATION DENSITIES; WET CHEMICAL ETCHING;

DISLOCATIONS (CRYSTALS);

EID: 33747310636     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/9/004     Document Type: Article

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