Physical properties of amorphous InGaZnO4 films doped with Mn

Applied Physics Letters

Volumn 94, Issue 9, 2009, Pages

  Liu, Shiu Jen ^a   Fang, Hau Wei ^b   Su, Shih Hao ^c   Li, Chia Hung ^c   Cherng, Jyh Shiarn ^b   Hsieh, Jang Hsing ^b   Juang, Jenh Yih ^c  

^a NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^b MING CHI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; DOPING (ADDITIVES); MAGNETIC PROPERTIES; MANGANESE COMPOUNDS; PULSED LASER DEPOSITION;

FIELD-DEPENDENT MAGNETIZATIONS; MN-DOPED; MN-DOPING; OPTICAL BANDS; OPTICAL TRANSMISSIONS; PULSED-LASER DEPOSITION TECHNIQUES; ROOM-TEMPERATURE FERROMAGNETISMS; VISIBLE RANGES;

MANGANESE;

EID: 62149105782     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3095505     Document Type: Article

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