Fabrication of solution processed inGZnO thin film transistor for active matrix backplane

Digest of Technical Papers - SID International Symposium

Volumn 39, Issue 3, 2008, Pages 1258-1261

  Kim, Gun Hee ^a   Shin, Hyun Soo ^a   Kim, Kyung Ho ^a   Park, Won Jun ^a   Choi, Yoon Jung ^a   Ahn, Byung Du ^a   Kim, Hyun Jae ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MOLAR RATIO; THIN FILM TRANSISTORS; THIN FILMS; ZINC COMPOUNDS;

ACTIVE MATRIX BACKPLANE; FIELD-EFFECT MOBILITIES; INGAZNO; OFF CURRENT; POLYCRYSTALLINE; SOLUTION-PROCESSED;

THIN FILM CIRCUITS;

EID: 54549110006     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1889/1.3069366     Document Type: Conference Paper

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