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Volumn 48, Issue 1, 2009, Pages

Comparison of ultraviolet photo-field effects between hydrogenated amorphous silicon and amorphous InGaZnO4 thin-film transistors

(5) Takechi, Kazushige a Nakata, Mitsuru a Eguchi, Toshimasa a Yamaguchi, Hirotaka b Kaneko, Setsuo b

a Technology Research Association for Advanced Display Materials TRADIM (Japan)

b NEC CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGENATION; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

A-SI:H; CURRENT INCREASE; FIELD EFFECTS; HYDROGENATED AMORPHOUS SILICONS; INITIAL STATE; PHOTO RESPONSE; QUALITATIVE MODELS; ULTRA VIOLETS; UV ILLUMINATIONS; UV LIGHTS;

AMORPHOUS SILICON;

EID: 59649110307 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.010203 Document Type: Article

Times cited : (139)

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