Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy

Journal of Applied Physics

Volumn 109, Issue 1, 2011, Pages

  Akazawa, M ^a,b   Gao, B ^a   Hashizume, T ^a,b   Hiroki, M ^c   Yamahata, S ^c   Shigekawa, N ^c  

^a HOKKAIDO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BANDBENDING; CONDUCTION BAND OFFSET; ENERGY POSITION; EXIT ANGLES; HETEROSTRUCTURES; IN-BAND; INDUCED ELECTRIC FIELDS; METAL-ORGANIC VAPOR PHASE EPITAXY; MOLAR FRACTIONS; NUMERICAL CALCULATION; SURFACE FERMI-LEVEL PINNING; ULTRA-THIN; VALENCE BAND OFFSETS; VALENCE-BAND OFFSET;

ALUMINUM; CRYSTALS; ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; ELECTRON MOBILITY; EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; INDIUM; RATING; VAPORS; X RAY PHOTOELECTRON SPECTROSCOPY;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 78751518055     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3527058     Document Type: Article

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