SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 106, Issue 7, 2009, Pages

Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields

(9) Ardaravicius L a Ramonas, M a Liberis, J a Kiprijanovic O a Matulionis, A a Xie, J b Wu, M b Leach, J H b Morko H b

a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY (Lithuania)

b Virginia Commonwealth University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; CHANNEL LENGTH; CURRENT SATURATION; DRIFT VELOCITIES; ELECTRON DENSITIES; ELECTRON DRIFT VELOCITY; FIELD INDEPENDENTS; HETEROSTRUCTURES; HIGH ELECTRIC FIELDS; HIGH FIELD; HOT-ELECTRON TRANSPORT; LATTICE-MATCHED; PULSED MEASUREMENTS; ROOM TEMPERATURE; SPACER THICKNESS; TWO DIMENSIONAL CHANNELS; UNIFORM ELECTRIC FIELDS;

ELECTRIC FIELDS; ELECTRON DIFFRACTION; VELOCITY;

ELECTRONS;

EID: 70350104953 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3236569 Document Type: Article

Times cited : (37)

References (46)

1
- 84889452940
- (Wiley-VCH, Berlin), Vols..
- H. Morko̧, Handbook of Nitride Semiconductors and Devices (Wiley-VCH, Berlin, 2008), Vols. I-III.
- (2008) Handbook of Nitride Semiconductors and Devices , vol.13
- Morko̧, H.¹

2
- 0142038457
- 0021-8979,. 10.1063/1.371866
- O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, A. J. Sierakowski, W. J. Schaff, L. F. Eastman, R. Dimitrov, A. Mitchell, and M. Stutzmann, J. Appl. Phys. 0021-8979 87, 334 (2000). 10.1063/1.371866
- (2000) J. Appl. Phys. , vol.87 , pp. 334
- Ambacher, O.¹ Foutz, B.² Smart, J.³ Shealy, J.R.⁴ Weimann, N.G.⁵ Chu, K.⁶ Murphy, M.⁷ Sierakowski, A.J.⁸ Schaff, W.J.⁹ Eastman, L.F.¹⁰ Dimitrov, R.¹¹ Mitchell, A.¹² Stutzmann, M.¹³

3
- 33747849050
- Anomalous ion channeling in AlInN/GaN bilayers: Determination of the strain state
- DOI 10.1103/PhysRevLett.97.085501
- K. Lorenz, N. Franco, E. Alves, I. M. Watson, R. W. Martin, and K. P. O'Donnell, Phys. Rev. Lett. 0031-9007 97, 085501 (2006). 10.1103/PhysRevLett.97. 085501 (Pubitemid 44286635)
- (2006) Physical Review Letters , vol.97 , Issue.8 , pp. 085501
- Lorenz, K.¹ Franco, N.² Alves, E.³ Watson, I.M.⁴ Martin, R.W.⁵ O'Donnell, K.P.⁶

4
- 0035506756
- Power electronics on InAlN/(In)GaN: Prospect for a record performance
- DOI 10.1109/55.962646, PII S0741310601094198
- J. Kuzmik, IEEE Electron Device Lett. 0741-3106 22, 510 (2001). 10.1109/55.962646 (Pubitemid 33106085)
- (2001) IEEE Electron Device Letters , vol.22 , Issue.11 , pp. 510-512
- Kuzmik, J.¹

5
- 25444513135
- High-current AlInN/GaN field effect transistors
- DOI 10.1002/pssa.200461466
- A. Dadgar, M. Neuburger, F. Schulze, J. Bläsing, A. Krtschil, I. Daumiller, M. Kunze, K. -M. Günther, H. Witte, A. Diez, E. Kohn, and A. Krost, Phys. Status Solidi A 0031-8965 202, 832 (2005). 10.1002/pssa.200461466 (Pubitemid 41365104)
- (2005) Physica Status Solidi (A) Applications and Materials , vol.202 , Issue.5 , pp. 832-836
- Dadgar, A.¹ Neuburger, M.² Schulze, F.³ Biasing, J.⁴ Krtschil, A.⁵ Daumiller, I.⁶ Kunze, M.⁷ Gunther, K.-M.⁸ Witte, H.⁹ Diez, A.¹⁰ Kohn, E.¹¹ Krost, A.¹²

6
- 33244495723
- InAlN/GaN HEMTs: A first insight into technological optimization
- DOI 10.1109/TED.2005.864379
- J. Kuzmik, A. Kostopoulos, G. Konstantinidis, J. -F. Carlin, A. Georgakilas, and D. Pogany, IEEE Trans. Electron Devices 0018-9383 53, 422 (2006). 10.1109/TED.2005.864379 (Pubitemid 43280593)
- (2006) IEEE Transactions on Electron Devices , vol.53 , Issue.3 , pp. 422-426
- Kuzmik, J.¹ Kostopoulos, A.² Konstantinidis, G.³ Carlin, J.-F.⁴ Georgakilas, A.⁵ Pogany, D.⁶

7
- 33846234502
- High-performance short-gate InAlN/GaN heterostructure field-effect transistors
- DOI 10.1143/JJAP.45.L843
- M. Higashiwaki, T. Mimura, and T. Matsui, Jpn. J. Appl. Phys., Part 2 0021-4922 45, L843 (2006). 10.1143/JJAP.45.L843 (Pubitemid 47387227)
- (2006) Japanese Journal of Applied Physics, Part 2: Letters , vol.45 , Issue.29-32
- Higashiwaki, M.¹ Mimura, T.² Matsui, T.³

8
- 40949121073
- 0018-9383,. 10.1109/TED.2007.915089
- J. Kuzmik, G. Pozzovivo, S. Abermann, J. -F. Carlin, M. Gonshorek, E. Feltin, N. Grandjean, E. Bertagnolli, G. Strasser, and D. Pogany, IEEE Trans. Electron Devices 0018-9383 55, 937 (2008). 10.1109/TED.2007.915089
- (2008) IEEE Trans. Electron Devices , vol.55 , pp. 937
- Kuzmik, J.¹ Pozzovivo, G.² Abermann, S.³ Carlin, J.-F.⁴ Gonshorek, M.⁵ Feltin, E.⁶ Grandjean, N.⁷ Bertagnolli, E.⁸ Strasser, G.⁹ Pogany, D.¹⁰

9
- 44349119706
- Effect of fluoride plasma treatment on InAlN/GaN HEMTs
- DOI 10.1049/el:20080864
- F. Medjdoub, M. Alomari, J. -F. Carlin, M. Gonshorek, E. Feltin, M. A. Py, C. Gaquiere, N. Grandjean, and E. Kohn, Electron. Lett. 0013-5194 44, 696 (2008). 10.1049/el:20080864 (Pubitemid 351744890)
- (2008) Electronics Letters , vol.44 , Issue.11 , pp. 696-698
- Medjdoub, F.¹ Alomari, M.² Carlin, J.-F.³ Gonschorek, M.⁴ Feltin, E.⁵ Py, M.A.⁶ Gaquiere, C.⁷ Grandjean, N.⁸ Kohn, E.⁹

10
- 34848922373
- High electron mobility in nearly lattice-matched AlInNAlNGaN heterostructure field effect transistors
- DOI 10.1063/1.2794419
- J. Xie, X. Ni, M. Wu, J. H. Leach, Ü. Özgür, and H. Morko̧, Appl. Phys. Lett. 0003-6951 91, 132116 (2007). 10.1063/1.2794419 (Pubitemid 47502576)
- (2007) Applied Physics Letters , vol.91 , Issue.13 , pp. 132116
- Xie, J.¹ Ni, X.² Wu, M.³ Leach, J.H.⁴ Ozgur, U.⁵ Morko, H.⁶

11
- 36048993925
- Current status of AlInN layers lattice-matched to GaN for photonics and electronics
- DOI 10.1088/0022-3727/40/20/S16, PII S0022372707433198
- R. Butt́, J. -F. Carlin, E. Feltin, M. Gonschorek, S. Nicolay, G. Christmann, D. Simeonov, A. Castiglia, J. Dorsaz, H. J. Buehlmann, S. Christopoulos, G. Baldassarri, H. von Högersthal, A. J. D. Grundy, M. Mosca, C. Pinquier, M. A. Py, F. Demangeot, J. Frandon, P. G. Lagoudakis, J. J. Baumberg, and N. Grandjean, J. Phys. D: Appl. Phys. 0022-3727 40, 6328 (2007). 10.1088/0022-3727/40/20/S16 (Pubitemid 350093020)
- (2007) Journal of Physics D: Applied Physics , vol.40 , Issue.20 , pp. 6328-6344
- Butte, R.¹ Carlin, J.-F.² Feltin, E.³ Gonschorek, M.⁴ Nicolay, S.⁵ Christmann, G.⁶ Simeonov, D.⁷ Castiglia, A.⁸ Dorsaz, J.⁹ Buehlmann, H.J.¹⁰ Christopoulos, S.¹¹ Baldassarri Hoger Von Hogersthal, G.¹² Grundy, A.J.D.¹³ Mosca, M.¹⁴ Pinquier, C.¹⁵ Py, M.A.¹⁶ Demangeot, F.¹⁷ Frandon, J.¹⁸ Lagoudakis, P.G.¹⁹ Baumberg, J.J.²⁰ Grandjean, N.²¹ more..

12
- 33747119032
- High electron mobility lattice-matched AllnN/GaN field-effect transistor heterostructures
- DOI 10.1063/1.2335390
- M. Gonschorek, J. -F. Carlin, E. Feltin, M. A. Py, and N. Grandjean, Appl. Phys. Lett. 0003-6951 89, 062106 (2006). 10.1063/1.2335390 (Pubitemid 44222934)
- (2006) Applied Physics Letters , vol.89 , Issue.6 , pp. 062106
- Gonschorek, M.¹ Carlin, J.-F.² Feltin, E.³ Py, M.A.⁴ Grandjean, N.⁵

13
- 34248593402
- Lattice-matched InAlN/GaN two-dimensional electron gas with high mobility and sheet carrier density by plasma-assisted molecular beam epitaxy
- DOI 10.1016/j.jcrysgro.2007.03.035, PII S002202480700293X
- K. Jeganathan, M. Shimizu, H. Okumura, Y. Yano, and N. Akutsu, J. Cryst. Growth 0022-0248 304, 342 (2007). 10.1016/j.jcrysgro.2007.03.035 (Pubitemid 46755209)
- (2007) Journal of Crystal Growth , vol.304 , Issue.2 , pp. 342-345
- Jeganathan, K.¹ Shimizu, M.² Okumura, H.³ Yano, Y.⁴ Akutsu, N.⁵

14
- 5944262503
- 0003-6951,. 10.1063/1.119408
- N. Grandjean and J. Massies, Appl. Phys. Lett. 0003-6951 71, 1816 (1997). 10.1063/1.119408
- (1997) Appl. Phys. Lett. , vol.71 , pp. 1816
- Grandjean, N.¹ Massies, J.²

15
- 34247846340
- High-mobility window for two-dimensional electron gases at ultrathin AlNGaN heterojunctions
- DOI 10.1063/1.2736207
- Y. Cao and D. Jena, Appl. Phys. Lett. 0003-6951 90, 182112 (2007). 10.1063/1.2736207 (Pubitemid 46701175)
- (2007) Applied Physics Letters , vol.90 , Issue.18 , pp. 182112
- Cao, Y.¹ Jena, D.²

16
- 21544477731
- 0021-8979,. 10.1063/1.360405
- J. Kolnik, I. H. Oguzman, K. F. Brennan, R. Wang, P. P. Ruden, and Y. Wang, J. Appl. Phys. 0021-8979 78, 1033 (1995). 10.1063/1.360405
- (1995) J. Appl. Phys. , vol.78 , pp. 1033
- Kolnik, J.¹ Oguzman, I.H.² Brennan, K.F.³ Wang, R.⁴ Ruden, P.P.⁵ Wang, Y.⁶

17
- 0001556024
- 0021-8979,. 10.1063/1.365963
- U. V. Bhapkar and M. S. Shur, J. Appl. Phys. 0021-8979 82, 1649 (1997). 10.1063/1.365963
- (1997) J. Appl. Phys. , vol.82 , pp. 1649
- Bhapkar, U.V.¹ Shur, M.S.²

18
- 0034140342
- Materials theory based modeling of wide band gap semiconductors: From basic properties to devices
- DOI 10.1016/S0038-1101(99)00224-5
- K. F. Brennan, E. Bellotti, M. Farahmanda, J. Haralson, P. P. Ruden, J. D. Albrecht, and A. Sutandi, Solid-State Electron. 0038-1101 44, 195 (2000). 10.1016/S0038-1101(99)00224-5 (Pubitemid 30564974)
- (2000) Solid-State Electronics , vol.44 , Issue.2 , pp. 195-204
- Brennan, K.F.¹ Bellotti, E.² Farahmand, M.³ Haralson, I.I.J.⁴ Ruden, P.P.⁵ Albrecht, J.D.⁶ Sutandi, A.⁷

19
- 0035540223
- 0370-1972,. 10.1002/1521-3951(200111)228:2<585::AID-PSSB585>3.0. CO;2-Z
- M. Wraback, H. Shen, E. Bellotti, J. C. Carrano, C. J. Collins, J. C. Campbell, R. D. Dupuis, M. J. Schurman, and I. T. Ferguson, Phys. Status Solidi B 0370-1972 228, 585 (2001). 10.1002/1521-3951(200111)228:2<585::AID- PSSB585>3.0.CO;2-Z
- (2001) Phys. Status Solidi B , vol.228 , pp. 585
- Wraback, M.¹ Shen, H.² Bellotti, E.³ Carrano, J.C.⁴ Collins, C.J.⁵ Campbell, J.C.⁶ Dupuis, R.D.⁷ Schurman, M.J.⁸ Ferguson, I.T.⁹

20
- 0040752656
- Time-resolved electroabsorption measurement of the transient electron velocity overshoot in GaN
- DOI 10.1063/1.1398318
- M. Wraback, H. Shen, J. C. Carrano, C. J. Collins, J. C. Campbell, R. D. Dupuis, M. J. Schurman, and I. T. Ferguson, Appl. Phys. Lett. 0003-6951 79, 1303 (2001). 10.1063/1.1398318 (Pubitemid 33599581)
- (2001) Applied Physics Letters , vol.79 , Issue.9 , pp. 1303-1305
- Wraback, M.¹ Shen, H.² Carrano, J.C.³ Collins, C.J.⁴ Campbell, J.C.⁵ Dupuis, R.D.⁶ Schurman, M.J.⁷ Ferguson, I.T.⁸

21
- 0036503811
- High-field transport studies of GaN
- DOI 10.1016/S0921-4526(01)01453-3, PII S0921452601014533
- J. M. Barker, R. Akis, D. K. Ferry, S. M. Goodnick, T. J. Thornton, D. D. Koleske, A. E. Wickenden, and R. L. Henry, Physica B 0921-4526 314, 39 (2002). 10.1016/S0921-4526(01)01453-3 (Pubitemid 34440563)
- (2002) Physica B: Condensed Matter , vol.314 , Issue.1-4 , pp. 39-41
- Barker, J.M.¹ Akis, R.² Ferry, D.K.³ Goodnick, S.M.⁴ Thornton, T.J.⁵ Koleske, D.D.⁶ Wickenden, A.E.⁷ Henry, R.L.⁸

22
- 0037631397
- 0003-6951,. 10.1063/1.1577833
- M. Wraback, H. Shen, S. Rudin, E. Bellotti, M. Goano, J. C. Carrano, C. J. Collins, J. C. Campbell, and R. D. Dupuis, Appl. Phys. Lett. 0003-6951 82, 3674 (2003). 10.1063/1.1577833
- (2003) Appl. Phys. Lett. , vol.82 , pp. 3674
- Wraback, M.¹ Shen, H.² Rudin, S.³ Bellotti, E.⁴ Goano, M.⁵ Carrano, J.C.⁶ Collins, C.J.⁷ Campbell, J.C.⁸ Dupuis, R.D.⁹

23
- 20644455339
- Bulk GaN and AlGaNGaN heterostructure drift velocity measurements and comparison to theoretical models
- DOI 10.1063/1.1854724, 063705
- J. M. Barker, D. K. Ferry, D. D. Koleske, and R. J. Shul, J. Appl. Phys. 0021-8979 97, 063705 (2005). 10.1063/1.1854724 (Pubitemid 40833708)
- (2005) Journal of Applied Physics , vol.97 , Issue.6 , pp. 1-5
- Barker, J.M.¹ Ferry, D.K.² Koleske, D.D.³ Shul, R.J.⁴

24
- 27744596639
- 0021-8979,. 10.1063/1.2089187
- E. Starikov, P. Shiktorov, V. Gružinskis, L. Varani, J. C. Vaissìre, C. Palermo, and L. Reggiani, J. Appl. Phys. 0021-8979 98, 083701 (2005). 10.1063/1.2089187
- (2005) J. Appl. Phys. , vol.98 , pp. 083701
- Starikov, E.¹ Shiktorov, P.² Gružinskis, V.³ Varani, L.⁴ Vaissìre, J.C.⁵ Palermo, C.⁶ Reggiani, L.⁷

25
- 33751071325
- Hot phonons in Si-doped GaN
- DOI 10.1063/1.2388866
- J. Liberis, M. Ramonas, O. Kiprijanovic, A. Matulionis, N. Goel, J. Simon, K. Wang, H. Xing, and D. Jena, Appl. Phys. Lett. 0003-6951 89, 202117 (2006). 10.1063/1.2388866 (Pubitemid 44772472)
- (2006) Applied Physics Letters , vol.89 , Issue.20 , pp. 202117
- Liberis, J.¹ Ramonas, M.² Kiprijanovic, O.³ Matulionis, A.⁴ Goel, N.⁵ Simon, J.⁶ Wang, K.⁷ Xing, H.⁸ Jena, D.⁹

26
- 55149107392
- 0741-3106,. 10.1109/LED.2008.2005433
- S. Sridharan and P. D. Yoder, IEEE Electron Device Lett. 0741-3106 29, 1190 (2008). 10.1109/LED.2008.2005433
- (2008) IEEE Electron Device Lett. , vol.29 , pp. 1190
- Sridharan, S.¹ Yoder, P.D.²

27
- 58149268996
- 0021-8979,. 10.1063/1.3032272
- A. Dyson and B. K. Ridley, J. Appl. Phys. 0021-8979 104, 113709 (2008). 10.1063/1.3032272
- (2008) J. Appl. Phys. , vol.104 , pp. 113709
- Dyson, A.¹ Ridley, B.K.²

28
- 65449171163
- 0953-8984,. 10.1088/0953-8984/21/17/174206
- S. Yamakawa, R. Akis, N. Faralli, M. Saraniti, and S. Goodnick, J. Phys.: Condens. Matter 0953-8984 21, 174206 (2009). 10.1088/0953-8984/21/17/174206
- (2009) J. Phys.: Condens. Matter , vol.21 , pp. 174206
- Yamakawa, S.¹ Akis, R.² Faralli, N.³ Saraniti, M.⁴ Goodnick, S.⁵

29
- 0344945401
- 0003-6951,. 10.1063/1.1626258
- L. Ardaravičius, A. Matulionis, J. Liberis, O. Kiprijanovic, M. Ramonas, L. F. Eastman, J. R. Shealy, and A. Vertiatchikh, Appl. Phys. Lett. 0003-6951 83, 4038 (2003). 10.1063/1.1626258
- (2003) Appl. Phys. Lett. , vol.83 , pp. 4038
- Ardaravičius, L.¹ Matulionis, A.² Liberis, J.³ Kiprijanovic, O.⁴ Ramonas, M.⁵ Eastman, L.F.⁶ Shealy, J.R.⁷ Vertiatchikh, A.⁸

30
- 11044225402
- Hot-electron transport in AIGaN/GaN two-dimensional conducting channels
- DOI 10.1063/1.1830078, 3
- B. A. Danilchenko, S. E. Zelensky, E. Drok, S. A. Vitusevich, S. V. Danylyuk, N. Klein, H. Lüth, A. E. Belyaev, and V. A. Kochelap, Appl. Phys. Lett. 0003-6951 85, 5421 (2004). 10.1063/1.1830078 (Pubitemid 40043598)
- (2004) Applied Physics Letters , vol.85 , Issue.22 , pp. 5421-5423
- Danilchenko, B.A.¹ Zelensky, S.E.² Drok, E.³ Vitusevich, S.A.⁴ Danylyuk, S.V.⁵ Klein, N.⁶ Luth, H.⁷ Belyaev, A.E.⁸ Kochelap, V.A.⁹

31
- 25444481311
- Comparative analysis of hot-electron transport in AlGaN/GaN and AlGaN/AlN/GaN 2DEG channels
- DOI 10.1002/pssa.200461618
- L. Ardaravičius, M. Ramonas, O. Kiprijanovic, J. Liberis, A. Matulionis, L. F. Eastman, J. R. Shealy, X. Chen, and Y. J. Sun, Phys. Status Solidi A 0031-8965 202, 808 (2005). 10.1002/pssa.200461618 (Pubitemid 41365099)
- (2005) Physica Status Solidi (A) Applications and Materials , vol.202 , Issue.5 , pp. 808-811
- Ardaravicius, L.¹ Ramonas, M.² Kiprijanovic, O.³ Liberis, J.⁴ Matulionis, A.⁵ Eastman, L.F.⁶ Shealy, J.R.⁷ Chen, X.⁸ Sun, Y.J.⁹

32
- 33747501008
- Nitride-based high electron mobility transistors with a GaN spacer
- DOI 10.1063/1.2335514
- T. Palacios, L. Shen, S. Keller, A. Chakraborty, S. Heikman, S. P. DenBaars, U. K. Mishra, J. Liberis, O. Kiprijanovic, and A. Matulionis, Appl. Phys. Lett. 0003-6951 89, 073508 (2006). 10.1063/1.2335514 (Pubitemid 44259982)
- (2006) Applied Physics Letters , vol.89 , Issue.7 , pp. 073508
- Palacios, T.¹ Shen, L.² Keller, S.³ Chakraborty, A.⁴ Heikman, S.⁵ Denbaars, S.P.⁶ Mishra, U.K.⁷ Liberis, J.⁸ Kiprijanovic, O.⁹ Matulionis, A.¹⁰

33
- 47749145360
- 0268-1242,. 10.1088/0268-1242/23/7/075048
- A. Matulionis, J. Liberis, E. Šermuksnis, J. Xie, J. H. Leach, M. Wu, and H. Morko̧, Semicond. Sci. Technol. 0268-1242 23, 075048 (2008). 10.1088/0268-1242/23/7/075048
- (2008) Semicond. Sci. Technol. , vol.23 , pp. 075048
- Matulionis, A.¹ Liberis, J.² Šermuksnis, E.³ Xie, J.⁴ Leach, J.H.⁵ Wu, M.⁶ Morko̧, H.⁷

34
- 15744399147
- 1-xN/AlN/GaN channel
- DOI 10.1103/PhysRevB.71.075324, 075324
- M. Ramonas, A. Matulionis, J. Liberis, L. Eastman, X. Chen, and Y. -J. Sun, Phys. Rev. B 0163-1829 71, 075324 (2005). 10.1103/PhysRevB.71.075324 (Pubitemid 40410851)
- (2005) Physical Review B - Condensed Matter and Materials Physics , vol.71 , Issue.7 , pp. 1-8
- Ramonas, M.¹ Matulionis, A.² Liberis, J.³ Eastman, L.⁴ Chen, X.⁵ Sun, Y.-J.⁶

35
- 33745464517
- Small-signal characteristics of AlInN/GaN HEMTs
- DOI 10.1049/el:20060768
- F. Medjdoub, J. -F. Carlin, M. Gonshorek, M. A. Py, N. Grandjean, S. Vandenbrouck, C. Gaquiere, J. C. Dejaeger, and E. Kohn, Electron. Lett. 0013-5194 42, 779 (2006). 10.1049/el:20060768 (Pubitemid 43953721)
- (2006) Electronics Letters , vol.42 , Issue.13 , pp. 779-780
- Medjdoub, F.¹ Carlin, J.-F.² Gonschorek, M.³ Py, M.A.⁴ Grandjean, N.⁵ Vandenbrouck, S.⁶ Gaquiere, C.⁷ Dejaeger, J.C.⁸ Kohn, E.⁹

36
- 43949101722
- x N/AlN/GaN heterostructures (0.03≤x≤0.23)
- DOI 10.1063/1.2917290
- M. Gonschorek, J. -F. Carlin, E. Feltin, M. A. Py, N. Grandjean, V. Darakchieva, B. Monemar, M. Lorenz, and G. Ramm, J. Appl. Phys. 0021-8979 103, 093714 (2008). 10.1063/1.2917290 (Pubitemid 351706964)
- (2008) Journal of Applied Physics , vol.103 , Issue.9 , pp. 093714
- Gonschorek, M.¹ Carlin, J.-F.² Feltin, E.³ Py, M.A.⁴ Grandjean, N.⁵ Darakchieva, V.⁶ Monemar, B.⁷ Lorenz, M.⁸ Ramm, G.⁹

37
- 44349105491
- 1874-1290 10.2174/1874129000802010001
- F. Medjdoub, J. -F. Carlin, C. Gaquiere, N. Grandjean, and E. Kohn, Open Electr. Electron. Eng. J. 2, 1 (2008). 1874-1290 10.2174/1874129000802010001
- (2008) Open Electr. Electron. Eng. J. , vol.2 , pp. 1
- Medjdoub, F.¹ Carlin, J.-F.² Gaquiere, C.³ Grandjean, N.⁴ Kohn, E.⁵

38
- 36448998964
- 0021-8979,. 10.1063/1.349389
- A. M. Cruz Serra and H. Abreu Santos, J. Appl. Phys. 0021-8979 70, 2734 (1991). 10.1063/1.349389
- (1991) J. Appl. Phys. , vol.70 , pp. 2734
- Cruz Serra, A.M.¹ Abreu Santos, H.²

39
- 0035473595
- 0003-6951,. 10.1063/1.1406978
- R. M. Chu, Y. G. Zhou, Y. D. Zheng, P. Han, B. Shen, and S. L. Gu, Appl. Phys. Lett. 0003-6951 79, 2270 (2001). 10.1063/1.1406978
- (2001) Appl. Phys. Lett. , vol.79 , pp. 2270
- Chu, R.M.¹ Zhou, Y.G.² Zheng, Y.D.³ Han, P.⁴ Shen, B.⁵ Gu, S.L.⁶

40
- 18144390838
- 0361-5235,. 10.1007/s11664-005-0105-6
- H. Y. Cha, Y. C. Choi, L. F. Eastman, M. G. Spencer, L. Ardaravičius, A. Matulionis, and O. Kiprijanovič, J. Electron. Mater. 0361-5235 34, 330 (2005). 10.1007/s11664-005-0105-6
- (2005) J. Electron. Mater. , vol.34 , pp. 330
- Cha, H.Y.¹ Choi, Y.C.² Eastman, L.F.³ Spencer, M.G.⁴ Ardaravičius, L.⁵ Matulionis, A.⁶ Kiprijanovič, O.⁷

41
- 0003230663
- (Academic, New York).
- P. Shaw, H. L. Grubin, and P. R. Solomon, The Gunn-Hilsum Effect (Academic, New York, 1979).
- (1979) The Gunn-Hilsum Effect
- Shaw, P.¹ Grubin, H.L.² Solomon, P.R.³

42
- 19744383947
- Hot-electron transport in 4H-SiC
- DOI 10.1063/1.1851001, 022107
- L. Ardaravičius, A. Matulionis, O. Kiprijanovic, J. Liberis, H. -Y. Cha, L. F. Eastman, and M. G. Spencer, Appl. Phys. Lett. 0003-6951 86, 022107 (2005). 10.1063/1.1851001 (Pubitemid 40211656)
- (2005) Applied Physics Letters , vol.86 , Issue.2 , pp. 0221071-0221073
- Ardaravicius, L.¹ Matulionis, A.² Kiprijanovic, O.³ Liberis, J.⁴ Cha, H.-Y.⁵ Eastman, L.F.⁶ Spencer, M.G.⁷

43
- 33847657956
- Time-resolved intervalley transitions in GaN single crystals
- DOI 10.1063/1.2496399
- S. Wu, P. Geisser, J. Jun, J. Karpinski, D. Wang, and R. Sobolewski, J. Appl. Phys. 0021-8979 101, 043701 (2007). 10.1063/1.2496399 (Pubitemid 46362928)
- (2007) Journal of Applied Physics , vol.101 , Issue.4 , pp. 043701
- Wu, S.¹ Geiser, P.² Jun, J.³ Karpinski, J.⁴ Wang, D.⁵ Sobolewski, R.⁶

44
- 0345601948
- 0163-1829,. 10.1103/PhysRevB.68.035338
- A. Matulionis, J. Liberis, I. Matulionien, M. Ramonas, L. F. Eastman, J. R. Shealy, V. Tilak, and A. Vertiatchikh, Phys. Rev. B 0163-1829 68, 035338 (2003). 10.1103/PhysRevB.68.035338
- (2003) Phys. Rev. B , vol.68 , pp. 035338
- Matulionis, A.¹ Liberis, J.² Matulionien, I.³ Ramonas, M.⁴ Eastman, L.F.⁵ Shealy, J.R.⁶ Tilak, V.⁷ Vertiatchikh, A.⁸

45
- 37549048160
- 0003-6951,. 10.1063/1.2824872
- J. Khurgin, Y. J. Ding, and D. Jena, Appl. Phys. Lett. 0003-6951 91, 252104 (2007). 10.1063/1.2824872
- (2007) Appl. Phys. Lett. , vol.91 , pp. 252104
- Khurgin, J.¹ Ding, Y.J.² Jena, D.³

46
- 65349086139
- 0277-786X,. 10.1117/12.802341
- A. Matulionis and H. Morko̧, Proc. SPIE 0277-786X 7216, 721608 (2009). 10.1117/12.802341
- (2009) Proc. SPIE , vol.7216 , pp. 721608
- Matulionis, A.¹ Morko̧, H.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.