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Volumn 93, Issue 19, 2008, Pages

Arsenic-dominated chemistry in the acid cleaning of InGaAs and InAlAs surfaces

(8) Sun, Yun a Pianetta, Piero a Chen, Po Ta b Kobayashi, Masaharu b Nishi, Yoshio b Goel, Niti c Garner, Michael c Tsai, Wilman c

a SLAC NATIONAL ACCELERATOR LABORATORY (United States)

b Stanford University (United States)

c INTEL CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACIDS; ALUMINA; ANNEALING; ARSENIC; CHEMICAL REACTIONS; GRAFTING (CHEMICAL); PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING INDIUM; SOLUTIONS; SYNCHROTRON RADIATION; SYNTHESIS (CHEMICAL);

ACID CLEANINGS; ACID SOLUTIONS; ACID TREATMENTS; ALUMINUM OXIDES; NATIVE OXIDES; SEMI-CONDUCTORS; SYNCHROTRON RADIATION PHOTOELECTRON SPECTROSCOPIES; THERMAL ANNEALING;

SURFACE CLEANING;

EID: 56249114825 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3025852 Document Type: Article

Times cited : (39)

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