|
Volumn 100, Issue PART 4, 2008, Pages
|
Corrected electron inelastic mean free paths (IMFPs) for selected wide band semiconductors
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ELECTRON SPECTROSCOPY;
GALLIUM NITRIDE;
MANGANESE;
WIDE BAND GAP SEMICONDUCTORS;
BINARY ALLOYS;
ELECTRONS;
III-V SEMICONDUCTORS;
NANOSCIENCE;
NICKEL METALLOGRAPHY;
SEMICONDUCTING CADMIUM COMPOUNDS;
SEMICONDUCTING MANGANESE COMPOUNDS;
VACUUM APPLICATIONS;
ELASTIC BACKSCATTERING;
ELASTIC PEAK ELECTRON SPECTROSCOPY;
ELECTRON INELASTIC MEAN FREE PATHS;
FINITE SURFACE;
MEASUREMENTS OF;
SURFACE EXCITATION PARAMETERS;
SURFACE EXCITATIONS;
WIDE BAND SEMICONDUCTORS;
ELECTRONS;
SEMICONDUCTING GALLIUM COMPOUNDS;
|
EID: 77954322903
PISSN: 17426588
EISSN: 17426596
Source Type: Conference Proceeding
DOI: 10.1088/1742-6596/100/4/042033 Document Type: Conference Paper |
Times cited : (2)
|
References (17)
|