Nanoscale probing of dielectric breakdown at SiO2 /3C-SiC interfaces

Journal of Applied Physics

Volumn 109, Issue 1, 2011, Pages

  Eriksson, Jens ^a,b   Roccaforte, Fabrizio ^a   Fiorenza, Patrick ^a   Weng, Ming Hung ^a   Giannazzo, Filippo ^a   Lorenzzi, Jean ^c   Jegenyes, Nikoletta ^c   Ferro, Gabriel ^c   Raineri, Vito ^a  

^a CNR IMM   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

^c UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; CAPACITANCE VOLTAGE MEASUREMENTS; CONDUCTIVE ATOMIC FORCE MICROSCOPY; CUBIC SILICON CARBIDE (3C-SIC); DIELECTRIC BREAKDOWNS; FAILURE PROBABILITY; FAILURE RATIO; HETEROEPITAXIAL LAYERS; LATERAL RESOLUTION; MORPHOLOGICAL FEATURES; NANO SCALE; NEAR-SURFACE; OXIDE LAYER; POLYTYPES; SCANNING CAPACITANCE MICROSCOPY; STRESS TIME; THERMALLY GROWN OXIDE; TRAPPED CHARGE;

ATOMIC FORCE MICROSCOPY; CAPACITANCE; ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; LEAKAGE CURRENTS; NANOSTRUCTURED MATERIALS; SILICA; SILICON CARBIDE; SILICON OXIDES; SURFACE DEFECTS; SURFACE ROUGHNESS;

SURFACE MORPHOLOGY;

EID: 78751476383     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3525806     Document Type: Article

References (29)

1. A. A. Lebedev, Semicond. Sci. Technol. 21, R17 (2006).
2. K. M. Speer, P. G. Neudeck, M. A. Crimp, C. Burda, and P. Pirouz, Phys. Status Solidi A 204, 2216 (2007).
3. G. Pensl, S. Beljakowa, T. Frank, K. Gao, F. Speck, T. Seyller, L. Ley, F. Ciobanu, V. Afanas'ev, A. Stesmans, T. Kimoto, and A. Schöner, Phys. Status Solidi B 245, 1378 (2008).
4. A. Schöner, M. Krieger, G. Pensl, M. Abe, and H. Nagasawa, Chem. Vap. Deposition 12, 523 (2006).
5. A. Agarwal, H. Fatima, S. Haney, and S.-H. Ryu, IEEE Electron Device Lett. 28, 587 (2007).
6. K. Matocha, G. Dunne, S. Soloviev, and R. Beaupre, IEEE Trans. Electron Devices 55, 1830 (2008).
7. V. V. Afanasev, M. Bassler, G. Pensl, and M. Schulz, Phys. Status Solidi A 162, 321 (1997).
8. C. D. Fung and J. J. Kopanski, Appl. Phys. Lett. 45, 757 (1984).
9. R. Esteve, A. Schöner, S. A. Reshanov, C.-M. Zetterling, and H. Nagasawa, J. Appl. Phys. 106, 044514 (2009).
10. R. Esteve, A. Schöner, S. A. Reshanov, C.-M. Zetterling, and H. Nagasawa, J. Appl. Phys. 106, 044513 (2009).
11. M. Krieger, S. Beljakowa, L. Trapaidze, T. Frank, H. B. Weber, G. Pensl, M. Abe, H. Nagasawa, and A. Schoener, Phys. Status Solidi B 245, 1390 (2008).
12. F. C. J. Kong, S. Dimitrijev, and J. Han, IEEE Electron Device Lett. 29, 1021 (2008).
13. K. K. Lee, G. Pensl, M. Soueidan, G. Ferro, and Y. Monteil, Jpn. J. Appl. Phys., Part 1 45, 6823 (2006).
14. S. R. Nutt, D. J. Smith, H. J. Kim, and R. F. Davis, Appl. Phys. Lett. 50, 203 (1987).
15. J. Senzaki, K. Kojima, T. Kato, A. Shimozato, and K. Fukuda, Appl. Phys. Lett. 89, 022909 (2006).
16. M. Soueidan, G. Ferro, B. Nsouli, M. Roumie, E. Polychroniadis, M. Kazan, S. Juillaguet, D. Chaussende, N. Habka, J. Stoemenos, J. Camassel, and Y. Monteil, Cryst. Growth Des. 6, 2598 (2006).
17. N. Jegenyes, J. Lorenzzi, V. Soulìre, J. Dazord, F. Cauwet, and G. Ferro, Mater. Sci. Forum 645-648, 127 (2010).
18. F. Giannazzo, F. Roccaforte, V. Raineri, and S. F. Liotta, Europhys. Lett. 74, 686 (2006).
19. F. Giannazzo, D. Goghero, V. Raineri, S. Mirabella, and F. Priolo, Appl. Phys. Lett. 83, 2659 (2003).
20. A. Severino, M. Camarda, S. Scalese, P. Fiorenza, S. Di Franco, C. Bongiorno, A. La Magna, and F. La Via, Appl. Phys. Lett. 95, 111905 (2009).
21. P. Fiorenza, R. Lo Nigro, V. Raineri, S. Lombardo, R. G. Toro, G. Malandrino, and I. L. Fragalá, J. Appl. Phys. 98, 044312 (2005).
22. P. Fiorenza, R. Lo Nigro, V. Raineri, S. Lombardo, R. G. Toro, G. Malandrino, and I. L. Fragala, Microelectron. Reliab. 47, 640 (2007).
23. R. Degraeve, G. Groeseneken, R. Bellens, J. L. Ogier, M. Depas, P. J. Roussel, and H. E. Maes, IEEE Trans. Electron Devices 45, 904 (1998).
24. P. Fiorenza and V. Raineri, Appl. Phys. Lett. 88, 212112 (2006).
25. P. Fiorenza, R. Lo Nigro, V. Raineri, and D. Salinas, Microelectron. Eng. 84, 441 (2007).
26. J. H. Stathis, J. Appl. Phys. 86, 5757 (1999).
27. G. Groeseneken, R. Degraeve, T. Nigam, G. Van den bosch, and H. E. Maes, Microelectron. Eng. 49, 27 (1999).
28. K. Kozono, T. Hosoi, Y. Kagei, T. Kirino, S. Mitani, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe, Mater. Sci. Forum 645-648, 821 (2010).
29. V. V. Afanas'ev, F. Ciobanu, S. Dimitrijev, G. Pensl, and A. Stesmans, Mater. Sci. Forum 483-485, 563 (2005).