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Applied Physics Letters

Volumn 95, Issue 11, 2009, Pages

Preferential oxidation of stacking faults in epitaxial off-axis (111) 3C-SiC films

(8) Severino, A a Camarda, M a Scalese, S a Fiorenza, P a Di Franco, S a Bongiorno, C a La Magna, A a La Via, F a

a CNR (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

3C-SIC FILMS; DEFECT-FREE; DRY OXIDATION; LOCAL POLARITY; METAL OXIDE SEMICONDUCTOR STRUCTURES; MORPHOLOGICAL CHARACTERIZATION; OFF-AXIS; OXIDATION RATES; PREFERENTIAL OXIDATION;

ATOMIC FORCE MICROSCOPY; EPITAXIAL FILMS; INTERNATIONAL TRADE; OXIDATION; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE;

STACKING FAULTS;

EID: 70349510294 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3227886 Document Type: Article

Times cited : (29)

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