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Journal of Applied Physics

Volumn 106, Issue 4, 2009, Pages

Comparative study of thermally grown oxides on n -type free standing 3C -SiC (001)

(5) Esteve, R a Schoner A a Reshanov, S A a Zetterling, C M b Nagasawa, H c

a ACREO AB (Sweden)

b ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

c HOYA CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPARATIVE STUDIES; EFFECTIVE OXIDE CHARGE; FLAT-BAND VOLTAGE SHIFT; INTERFACE TRAPS; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; MOBILE CHARGE; OXIDATION PROCESS; POSTOXIDATION ANNEALING; THERMALLY GROWN OXIDE;

ELECTRIC POTENTIAL; MOS CAPACITORS; OXYGEN; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 69749102705 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3204642 Document Type: Article

Times cited : (21)

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