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Journal of Applied Physics

Volumn 106, Issue 4, 2009, Pages

Advanced oxidation process combining oxide deposition and short postoxidation step for N -type 3C - And 4H-SiC

(5) Esteve, R a Schoner A a Reshanov, S A a Zetterling, C M b Nagasawa, H c

a ACREO AB (Sweden)

b ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

c HOYA CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADVANCED OXIDATION PROCESSES; BREAKDOWN FIELD; ELECTRICAL PROPERTY; INTERFACE TRAPS; OXIDE DEPOSITION; OXIDE FIXED CHARGE; PLASMA ENHANCED DEPOSITION; POST ANNEALING; POST-OXIDATION; THREE GAS;

ELECTRIC PROPERTIES; OXIDATION; OXIDATION RESISTANCE; OXYGEN; PLASMA DEPOSITION; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 69749095925 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3204646 Document Type: Article

Times cited : (20)

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