Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors

Physica Status Solidi (B) Basic Research

Volumn 245, Issue 7, 2008, Pages 1390-1395

  Krieger, M ^a   Beljakowa, S ^a   Trapaidze, L ^a,b   Frank, T ^a,e   Weber, H B ^a   Pensl, G ^a   Hatta, N ^c   Abe, M ^c   Nagasawa, H ^c   Schoner A ^d  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b TBILISI STATE UNIVERSITY   (Georgia)

^c HOYA CORPORATION   (Japan)

^d ACREO AB   (Sweden)

^e SICRYSTAL AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 55449092307     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200844062     Document Type: Review

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