Investigation of 3C-SiC(111) homoepitaxial growth by CVD at high temperature

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 127-130

  Jegenyes, N ^a   Lorenzzi, J ^a   Souliere V ^a   Dazord, J ^a   Cauwet, F ^a   Ferro, G ^a  

^a UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

Author keywords

3C SiC; CVD; Homoepitaxial growth; Surface roughness

Indexed keywords

CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SURFACE MORPHOLOGY; SURFACE ROUGHNESS;

3C-SIC; C/SI RATIO; CHEMICAL VAPOUR DEPOSITION; DEFECT SIZE; GASPHASE; HIGH TEMPERATURE; HOMOEPITAXIAL GROWTH; VAPOUR-LIQUID-SOLID MECHANISMS;

SILICON CARBIDE;

EID: 77955443879     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.127     Document Type: Conference Paper

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