Possible formation mechanisms for surface defects observed in heteroepitaxially grown 3C-SiC

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 7, 2007, Pages 2216-2221

  Speer, K M ^a   Neudeck, P G ^b   Crimp, M A ^c   Burda, C ^d   Pirouz, P ^a  

^a Case Western Reserve University   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

^c Michigan State University   (United States)

^d CASE WESTERN RESERVE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CHANNELING; IMMOBILE LINEAR FEATURES; OPTICAL EMISSION MICROSCOPY; TERRACES;

CHEMICAL STABILITY; EPITAXIAL GROWTH; INTERFACIAL ENERGY; OPTICAL MICROSCOPY; SILICON; SURFACE DEFECTS;

EPITAXIAL FILMS;

EID: 34547519065     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200675446     Document Type: Article

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