Electrical characteristics of near-interface traps in 3C-SiC metal-oxide-semiconductor capacitors

IEEE Electron Device Letters

Volumn 29, Issue 9, 2008, Pages 1021-1023

  Kong, Fred C J ^a   Dimitrijev, Sima ^a   Han, Jisheng ^a  

^a GRIFFITH UNIVERSITY   (Australia)

Author keywords

3C SiC; Capacitance transients; MOS capacitors; Near interface traps

Indexed keywords

CAPACITANCE; CAPACITANCE MEASUREMENT; CAPACITORS; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRIC EQUIPMENT; ELECTRON MOBILITY; MATHEMATICAL MODELS; SILICON; SILICON CARBIDE;

3C-SIC; CAPACITANCE TRANSIENTS; NEAR-INTERFACE TRAPS;

MOS CAPACITORS;

EID: 50649119758     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2001753     Document Type: Article

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