Defects induced anomalous breakdown kinetics in Pr2O3 by micro- and nano-characterization

Microelectronics Reliability

Volumn 47, Issue 4-5 SPEC. ISS., 2007, Pages 640-644

  Fiorenza, P ^a   Lo Nigro, R ^a   Raineri, V ^a   Lombardo, S ^a   Toro, R G ^b   Malandrino, G ^b   Fragala I L ^b  

^a CNR IMM   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE MEASUREMENT; DIELECTRIC FILMS; ELECTRIC BREAKDOWN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PRASEODYMIUM;

BREAKDOWN KINETICS; CONDUCTION MECHANISMS; WEIBULL SLOPES;

THIN FILMS;

EID: 34247097927     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.01.022     Document Type: Article

References (14)

1. Lombardo S., Stathis J.H., Linder B.P., Pey K.L., Palumbo F., and Tung C.H. J Appl Phys 98 (2005) 121301
2. Lo Nigro R., Toro R.G., Malandrino G., Raineri V., and Fragala I.L. Adv Mater 15 (2003) 1071
3. Fiorenza P., Lo Nigro R., Raineri V., Lombardo S., Toro R.G., Malandrino G., et al. J Appl Phys 98 (2005) 44312
4. Osten H.J., Liu J.P., and Mussig H.J. Appl Phys Lett 80 (2002) 297
5. Fiorenza P., Lo Nigro R., Raineri V., Lombardo S., Toro R.G., Malandrino G., et al. Appl Phys Lett 87 (2005) 231913
6. Lo Nigro R., Toro R.G., Malandrino G., and Fragalà I.L. J Electrochem Soc 151 (2004) F206
7. Lo Nigro R., Toro R.G., Malandrino G., Condorelli G.G., Raineri V., and Fragalà I.L. Adv Funct Mater 15 (2005) 838
8. Lo Nigro R., Malandrino G., Toro R.G., and Fragalà I.L. Chem Vap Deposition 12 (2006) 109
9. Nafria M., Surie J., and Aymerich X. J Appl Phys 73 (1993) 205
10. Depas H., Nigam T., and Heyns M.M. IEEE Trans Electron Dev 43 (1996) 1499
11. Xie X.N., Chung H.J., Sow C.H., and Wee A.T.S. Appl Phys Lett 86 (2005) 023112
12. Degraeve R., Groeseneken G., Bellens R., Depas M., and Maes H.E. IEDM Tech Dig 863 (1995)
13. Stathis J.H. J Appl Phys 86 (1999) 5757
14. Kauerauf T., Degraeve R., Cartier E., Soens C., and Groeseneken G. IEEE Electron Dev Lett 23 (2002) 215