Direct observation of dielectric breakdown spot in thermal oxides on 4H-SiC(0001) using conductive atomic force microscopy

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 821-824

  Kozono, Kohei ^a   Hosoi, Takuji ^a   Kagei, Yusuke ^a   Kirino, Takashi ^a   Mitani, Shuhei ^b   Nakano, Yuki ^b   Nakamura, Takashi ^b   Shimura, Takayoshi ^a   Watanabe, Heiji ^a  

^a OSAKA UNIVERSITY   (Japan)

^b ROHM CO LTD   (Japan)

Author keywords

4H SiC; C AFM; Dielectric breakdown; MOS devices; Reliability; Step bunching; TDDB

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON ON INSULATOR TECHNOLOGY; SILICON OXIDES; WEIBULL DISTRIBUTION; WIDE BAND GAP SEMICONDUCTORS;

4H-SIC; CONDUCTIVE ATOMIC FORCE MICROSCOPY; CONSTANT VOLTAGE STRESS; DIELECTRIC BREAKDOWN MECHANISM; METAL OXIDE SEMICONDUCTOR; STEP BUNCHING; TDDB; TIME DEPENDENT DIELECTRIC BREAKDOWN;

SILICON CARBIDE;

EID: 77955448382     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.821     Document Type: Conference Paper

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