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Volumn 16, Issue 1, 2006, Pages 95-102

Asymmetric tunneling source mosfets: A novel device solution for sub-100nm CMOS technology

Author keywords

MOSFET; Nanotransistor

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON TUNNELING; NANOSTRUCTURED MATERIALS; TRANSISTORS;

EID: 33747668151     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156406003552     Document Type: Conference Paper
Times cited : (4)

References (4)
  • 2
    • 0037545838 scopus 로고    scopus 로고
    • Simulation of schottky barrier tunnel transistor using simple boundary condition
    • J. Moongyu, K Kang, S. Lee, K. Park "Simulation of Schottky barrier tunnel transistor using simple boundary condition", Applied Physics Letters, vol. 82, pp. 2718-2720, 2003.
    • (2003) Applied Physics Letters , vol.82 , pp. 2718-2720
    • Moongyu, J.1    Kang, K.2    Lee, S.3    Park, K.4
  • 3
    • 50549156338 scopus 로고
    • Zener tunneling in semiconductors
    • E. O. Kane, "Zener Tunneling in Semiconductors", Journal of Phys. Chem. Solids vol. 12, pp. 181-188, 1959.
    • (1959) Journal of Phys. Chem. Solids , vol.12 , pp. 181-188
    • Kane, E.O.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.