Ultrathin silicon-on-insulator vertical tunneling transistor

Applied Physics Letters

Volumn 83, Issue 8, 2003, Pages 1653-1655

  Zaslavsky, A ^a   Aydin, C ^a   Luryi, S ^b   Cristoloveanu, S ^c   Mariolle, D ^d   Fraboulet, D ^d   Deleonibus, S ^d  

^a Brown University   (United States)

^b STONY BROOK UNIVERSITY   (United States)

^c IMEP LAHC   (France)

^d CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; QUANTUM THEORY; SUBSTRATES; THRESHOLD VOLTAGE; TRANSISTORS;

TUNNELING TRANSISTORS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0041780657     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1600832     Document Type: Article

References (21)

1. The latest publicly released version of the ITRS roadmap is available on the http://public.itrs.net web site.
2. G. K. Celler and S. Cristoloveanu, J. Appl. Phys. 93, 4955 (2003).
3. P. M. Solomon, in Future Trends in Microelectronics: The Nano Millennium, edited by S. Luryi, J. M. Xu, and A. Zaslavsky (Wiley-Interscience, New York, 2002), pp. 28-42.
4. Y. Takahashi, M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate, Y. Nakajima, S. Horiguchi, K. Murase, and M. Tabe, Electron. Lett. 31, 136 (1995).
5. E. Leobandung, L. Guo, Y. Wang, and S. Y. Chou, Appl. Phys. Lett. 67, 938 (1995); E. Leobandung, L. Guo, and S. Y. Chou, ibid. 67, 2338 (1995).
6. E. Leobandung, L. Guo, Y. Wang, and S. Y. Chou, Appl. Phys. Lett. 67, 938 (1995); E. Leobandung, L. Guo, and S. Y. Chou, ibid. 67, 2338 (1995).
7. M. Saito, T. Saito, T. Inukai, and T. Hiramoto, Appl. Phys. Lett. 79, 2025 (2001).
8. S. Luryi, Appl. Phys. Lett. 52, 501 (1988).
9. S. Luryi, Appl. Phys. Lett. 47, 490 (1985).
10. An overview of the quantum effect tunneling devices is available, for example, in S. Luryi and A. Zaslavsky, "Quantum effect and hot electron devices," chapter in Modern Semiconductor Device Physics, edited by S. M. Sze (Wiley-Interscience, New York, 1998), pp. 253-341.
11. H. C. Liu, D. Landheer, M. Buchanan, and D. C. Houghton, Appl. Phys. Lett. 52, 1809 (1988).
12. Z. Matutinovic-Krstelj, C. W. Liu, X. Xiao, and J. C. Sturm, Appl. Phys. Lett. 62, 603 (1993).
13. U. Gennser, V. P. Kesan, D. A. Syphers, T. P. Smith III, S. S. Iyer, and E. S. Yang, Phys. Rev. Lett. 67, 3828 (1991).
14. J. Liu, A. Zaslavsky, and L. B. Freund, Phys. Rev. Lett. 89, 096804 (2002).
15. M. Watanabe, Y. Iketani, and M. Asada, Jpn. J. Appl. Phys., Part 2 39, L964 (2000); T. Terayama, H. Sekine, and K. Tsutsui, Jpn. J. Appl. Phys., Part 1 41, 2598 (2002).
16. M. Watanabe, Y. Iketani, and M. Asada, Jpn. J. Appl. Phys., Part 2 39, L964 (2000); T. Terayama, H. Sekine, and K. Tsutsui, Jpn. J. Appl. Phys., Part 1 41, 2598 (2002).
17. H. Morkoç, J. Chen, U. K. Reddy, T. Henderson, and S. Luryi, Appl. Phys. Lett. 49, 70 (1986).
18. D. Esseni, M. Mastrapasqua, G. K. Celler, F. H. Baumann, C. Fiegna, L. Selmi, and E. Sangiorgi, Tech. Dig. - Int. Electron Devices Meet. 2000, 671 (2000).
19. J. Prétet, A. Ohata, S. Cristoloveanu, C. Aydin, A. Zaslavsky, D. Mariolle, and S. Deleonibus (unpublished).
20. V. J. Goldman, D. C. Tsui, and J. E. Cunningham, Phys. Rev. B 36, 7635 (1987).
21. N. Lifshitz, S. Luryi, and T. T. Sheng, Appl. Phys. Lett. 51, 1824 (1987).