Towards the sub-50 nm magnetic device definition: Ion beam etching (IBE) vs plasma-based etching

Vacuum

Volumn 83, Issue 6, 2009, Pages 1007-1013

  Peng, Xilin ^a   Wakeham, Stacey ^a   Morrone, Augusto ^a   Axdal, Steven ^a   Feldbaum, Michael ^a   Hwu, Justin ^a   Boonstra, Tom ^a   Chen, Yonghua ^a   Ding, Juren ^a  

^a SEAGATE TECHNOLOGY   (United States)

Author keywords

Ion beam etching (IBE); Magnetic materials; Reactive ion etching (RIE); Tunneling magneto resistive (TMR); XPS

Indexed keywords

BYPRODUCTS; EMISSION SPECTROSCOPY; ETCHING; ION BEAMS; IONS; MAGNETIC DEVICES; MAGNETIC MATERIALS; MAGNETIC STORAGE; MAGNETOS; MILLING (MACHINING); PHOTORESISTS; PLASMAS; RANDOM ACCESS STORAGE; TUNNELING (EXCAVATION); X RAY PHOTOELECTRON SPECTROSCOPY;

DEVICE MATERIALS; EMISSION SPECTRUMS; ION BEAM ETCHING (IBE); ION MILLING; MILLING TIME; PATTERN TRANSFERRING; RANDOM ACCESS MEMORIES; REACTIVE ION ETCHING (RIE); TMR DEVICES; TUNNELING MAGNETO RESISTIVE (TMR); TUNNELLING MAGNETORESISTANCE (TMR) DEVICES; XPS;

REACTIVE ION ETCHING;

EID: 58749105103     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2008.12.003     Document Type: Article

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