The effect of BCl3 addition on RuO2 etching in M = 0 helicon reactor

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 5 PART A, 1998, Pages

  Kim, Yun Sang ^a   Rampersad, Regan H ^a   Tynan, George R ^a  

^a Trikon Technologies Inc   (United States)

Author keywords

Ferroelectric capacitor; Helicon wave plasma; High density plasma; Ruthenium oxide etch; Scavenger; Selectivity

Indexed keywords

ADDITION REACTIONS; BORON COMPOUNDS; CAPACITORS; FERROELECTRIC DEVICES; ION BOMBARDMENT; PHOTORESISTS; PLASMA APPLICATIONS; PLASMA ETCHING;

BORON CHLORITE; FERROELECTRIC CAPACITOR; HELICON WAVE PLASMA; HIGH DENSITY PLASMA; RUTHENIUM OXIDE;

OXIDES;

EID: 0032070864     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l502     Document Type: Article

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