Effects of discharge frequency in plasma etching and ultrahigh-frequency plasma source for high-performance etching for ultralarge-scale integrated circuits

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 A, 2000, Pages 1583-1596

  Samukawa, Seiji ^a   Donnelly, Vincent M ^b   Malyshev, Mikhail V ^b  

^a NEC CORPORATION   (Japan)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

Discharge frequency; Electron energy distribution function; Inductively coupled plasma; Plasma etching; Ultrahigh frequency plasma

Indexed keywords

EID: 0141458421     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.1583     Document Type: Article

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