Elimination of pillar associated with micropipe of SiC in high-rate inductively coupled plasma etching

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 2, 2009, Pages 295-300

  Okamoto, Naoya ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTORESISTS; PLANTS (BOTANY); PLASMA ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

ETCH PRODUCTS; ETCHING CONDITIONS; HIGH ETCH RATES; HIGH RATES; HIGH SELECTIVITIES; INDUCTIVELY COUPLED PLASMA ETCHINGS; METAL MASKS; MICROPIPE; MICROPIPES; MICROTRENCHES; NONVOLATILE; PILLAR FORMATIONS; VIA HOLES;

INDUCTIVELY COUPLED PLASMA;

EID: 61449159778     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3077297     Document Type: Article

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