Differential etching behavior between semi-insulating and n -doped 4H-SiC in high-density SF6 / O2 inductively coupled plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 3, 2009, Pages 456-460

  Okamoto, Naoya ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

4H-SIC SUBSTRATES; DIFFERENTIAL ETCHINGS; ELECTRICAL CONDUCTIVITIES; ETCH RATES; ETCHING CHARACTERISTICS; ETCHING PROFILES; FREE-CARRIER ABSORPTIONS; HIGH DENSITIES; HIGH ETCH RATES; HIGH-DENSITY PLASMAS; N-DOPED; NEGATIVE CHARGES; NEGATIVE CHARGING; RADIATIVE HEATING; SEMI-INSULATING; SIDE WALL ANGLES; WAFER HEATING;

ELECTRIC CONDUCTIVITY; HEATING; INDUCTIVELY COUPLED PLASMA; PHOTORESISTS; PLASMA ETCHING; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 65549164067     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3100215     Document Type: Article

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