A process for photoresist removal after aluminum etching using plasma treatment in a gas containing hydrogen

Journal of the Electrochemical Society

Volumn 149, Issue 8, 2002, Pages

  Saito, Makoto ^a,b   Touno, Ichiro ^b   Omiya, Kayoko ^b   Homma, Tetsuya ^a   Nagatomo, Takao ^a  

^a SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CHLORINE COMPOUNDS; EMISSION SPECTROSCOPY; HYDROGEN; INDUCTIVELY COUPLED PLASMA; METHANOL; PLASMA APPLICATIONS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SPUTTER DEPOSITION; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM FILM ETCHING; CHLORIDES; HYDROGEN CONTAINING GAS; PHOTORESIST REMOVAL PROCESS; PLASMA TREATMENT;

PHOTORESISTS;

EID: 0036687391     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1485777     Document Type: Article

References (10)