Micro-Raman scattering study of InGaAs/(AlAs)/AlAsSb quantum wells grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 178-182

  Mozume, T ^a   Kasai, J ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

A1. Plasmon LO phonon coupling; A1. Raman scattering; A3. Molecular beam epitaxy; A3. Quantum wells; B1. InGaAs AlAsSb; B2. Semiconducting III V materials

Indexed keywords

FREQUENCIES; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; PHONONS; RAMAN SCATTERING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES; VECTORS;

ALASSB; PLASMON-LO-PHONON COUPLING; SEMICONDUCTING III-V MATERIALS; TWO-MODE BEHAVIOR;

SEMICONDUCTOR QUANTUM WELLS;

EID: 18444418038     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.072     Document Type: Conference Paper

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