Effect of the hydrogen and argon ion-beam treatments on the structural and electrical properties of Cz Si wafers: Comparative study

Vacuum

Volumn 83, Issue SUPPL.1, 2009, Pages

  Zinchuk, O ^a   Drozdov, N ^a   Fedotov, A ^a   Mazanik, A ^a   Krekotsen, N ^b   Ukhov, V ^b   Partyka, J ^c   Wegierek, P ^c   Koltunowicz T ^c  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

^b STC Belmicrosystems   (Belarus)

^c LUBLIN UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Argon; Hydrogen; Ion beam treatment; Silicon

Indexed keywords

ARGON ION BEAMS; ARGON-IONS; COMPARATIVE STUDIES; DEPTH DISTRIBUTIONS; ELECTRICAL PROPERTIES; INSULATING LAYERS; ION ENERGIES; ION-BEAM TREATMENT; P TYPES; P-TYPE WAFERS; PHOTOVOLTAGE; SI WAFERS; SIGN-ON; STRUCTURAL AND ELECTRICAL PROPERTIES; SURFACE BAND BENDING; TREATMENT DURATIONS; WIDE SPECTRAL RANGES;

ARGON; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; HYDROGEN; ION BEAMS; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS;

IONS;

EID: 67349223619     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.01.035     Document Type: Article

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