Properties of silicon oversaturated with implanted hydrogen

Thin Solid Films

Volumn 403-404, Issue , 2002, Pages 500-504

  Popov, V P ^a   Tyschenko, I E ^a   Safronov, L N ^a   Naumova, O V ^a   Antonova, I V ^a   Gutakovsky, A K ^a   Talochkin, A B ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

a Si:H c Si photovoltaic heterostructure; Amorphous silicon; Hydrogen implantation

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HETEROJUNCTIONS; HIGH RESOLUTION ELECTRON MICROSCOPY; HYDROGEN; HYDROGEN BONDS; HYDROGENATION; INTERFACES (MATERIALS); ION IMPLANTATION; NANOSTRUCTURED MATERIALS; PHOTOSENSITIVITY; POLYMERIZATION; RAMAN SPECTROSCOPY;

HETEROJUNCTION BOUNDARIES;

AMORPHOUS SILICON;

EID: 0036467738     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01664-9     Document Type: Conference Paper

References (2)