Non-equilibrium impurity redistribution in Si

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 186, Issue 1-4, 2002, Pages 366-370

  Buzynin, A N ^a   Luk'yanov, A E ^a   Osiko, V V ^a   Voronkov, V V ^b  

^a PROKHOROV GENERAL PHYSICS INSTITUTE   (Russian Federation)

^b INSTITUTE OF RARE METALS   (Russian Federation)

Author keywords

Boron; Irradiation; Self interstitial; Silicon

Indexed keywords

CRYSTAL IMPURITIES; DIFFUSION; IRRADIATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; TRANSPORT PROPERTIES;

ION IRRADIATION;

SEMICONDUCTING SILICON;

EID: 0036135434     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00882-5     Document Type: Article

References (6)