Characterisation of reactive-ion-etching-induced type-conversion in p-type HgCdTe using scanning laser microscopy

Journal of Crystal Growth

Volumn 184-185, Issue , 1998, Pages 1219-1222

  Siliquini, J F ^a   Dell, J M ^a   Musca, C A ^a   Faraone, L ^a   Piotrowski, J ^b  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

^b VIGO SYSTEM S A   (Poland)

Author keywords

Characterisation; HgCdTe; Junction; Laser microscopy; Reactive ion etching

Indexed keywords

EID: 0000527759     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0022-0248(98)80255-8     Document Type: Article

References (7)

1. J.R. Spencer, J.H. Dinan, P.R. Boyd, H. Wilson, S.E. Butrill, J. Vac. Sci. Technol. A 7 (1989) 676.
2. E. Belas, J. Franc, A. Toth, P. Moravec, R. Grill, H. Silter, P. Hoschel, Semicond. Sci. Technol. 11 (1996) 1116.
3. H. Ryssel, G. Lang, J.P. Biersack, K. Muller, W. Kruger, IEEE Trans. Electron. Dev. 27 (1980).
4. E. Belas, R. Grill, J. Franc, A. Toth, P. Hoschl, H. Sitter, P. Moravec, J. Crystal Growth 159 (1996) 1117.
5. J. Bajaj, W.E. Tennant, R. Zucca, S.J.C. Irvine, Semicond. Sci. Technol. 8 (1993) 872.
6. J.T. Wallmark, Proc. IRE 45 (1957) 474.
7. K.A. Fynn, J. Bajaj, L. Faraone, IEEE Trans. Electron. Dev. 42 (1995) 1775.