Role of oxygen impurities in etching of silicon by atomic hydrogen

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 3, 2008, Pages 313-320

  Veprek, Stan ^a   Wang, Chunlin ^a,b   Veprek Heijman, Maritza G J ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b NONE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC HYDROGEN; NEGATIVE POTENTIAL; OXYGEN IMPURITIES;

ACTIVATION ENERGY; ETCHING; GLOW DISCHARGES; HYDROGEN; IMPURITIES; ION BOMBARDMENT; SILICON;

MOLECULAR OXYGEN;

EID: 42949163020     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2884731     Document Type: Article

References (89)