Shallow thermal donors in silicon: The roles of Al, H, N, and point defects

Physica Status Solidi (B) Basic Research

Volumn 210, Issue 2, 1998, Pages 519-525

  Newman, R C ^a   Ashwin, M J ^a   Pritchard, R E ^a   Tucker, J H ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032267215     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199812)210:2<519::AID-PSSB519>3.0.CO;2-H     Document Type: Article

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