Transmission electron microscopy study of hydrogen defect formation at extended defects in hydrogen plasma treated multicrystalline silicon

Journal of Applied Physics

Volumn 105, Issue 3, 2009, Pages

  Nordmark, Heidi ^a   Holmestad, Randi ^a   Walmsley, John C ^b   Ulyashin, Alexander ^b  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b SINTEF MATERIALS AND CHEMISTRY   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRON MICROSCOPY; GRAIN BOUNDARIES; HYDROGEN; MOSFET DEVICES; NONMETALS; PASSIVATION; PLASMA APPLICATIONS; PLASMAS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; STACKING FAULTS; SURFACE TREATMENT; VOLTAGE DIVIDERS;

BULK DEFECTS; DEFECTS AND IMPURITIES; DENSITY OF DEFECTS; EXTENDED DEFECTS; GRAIN ORIENTATIONS; HIGH-TEMPERATURE PROCESSING; HYDROGEN DEFECTS; HYDROGEN PLASMA TREATMENTS; HYDROGEN PLASMAS; INDUCED DEFECTS; INTRA-GRANULAR DEFECTS; MULTI-CRYSTALLINE SILICONS; PLASMA TREATMENTS; SAMPLE SURFACES; SI SURFACES; SI WAFERS; SOLAR-CELL APPLICATIONS; STRUCTURAL DEFECTS; SUBSURFACE REGIONS; TRANSMISSION ELECTRONS;

SURFACE DEFECTS;

EID: 60449113408     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3073893     Document Type: Article

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